Silicon Epitaxial Wafers
Aeroflex / Metelics is a supplier of silicon epitaxial wafers. We offer a wide range of capabilities to serve manufacturers of discrete Si devices. Our epi wafers are grown to customer-furnished specifications, based upon the following capabilities.
Epi Capabilities
Wafer Diameter:
3”, 100mm, 125mm
Silicon substrate:
Bulk Czochralski, bulk floatzone or SOI
Substrate Dopant:
FZ: Boron or Phosphorus
Cz: Boron, Phosphorus, Arsenic or Antimony
Epi Layer Dopant:
Boron, Phosphorus or Arsenic
Number of Epi Layers: 1, 2 or 3
Epi Layer Resistivity Available Range:
p-type: .009 to 1000 ohm-cm (thickness dependent)
n-type: .005 to 2000 ohm-cm (thickness dependent)
Epi Layer Thickness Available Range:
0.5 to 500 m
Epi for a Variety of Devices:
Aeroflex / Metelics is an experienced manufacturer of epi
wafers tailored for the following discrete silicon devices:
- PIN diodes (RF and photodiode)
- Varactor diodes
- Schottky diodes
- Bipolar transistors
- MOSFETs
- JFETs
- IGBTs
- MEMs
Quality Assurance: Aeroflex / Metelics is an ISO 9001 facility. Epi wafers are
inspected per the relevant SEMI standards. Our in-house
epi measurement equipment includes:
- FTIR for measurement of epi layer thickness;
- C-V Hg-probe for measurement of epi resistivity;
- Spreading resistance profile (SRP) for measurement of epi resistivity vs depth;
- Four point probe for measurement of epi resistivity atop a p-n junction;
- 100% visual inspection using a high intensity Yamada inspection lamp.
Capacity: Aeroflex / Metelics can grow small quantity, one-time
orders as well as high volume blanket orders. We can
rapidly add production shifts in order to fulfill surge
demand for epi wafers.
Experience: Aeroflex / Metelics silicon epi group is comprised of highly skilled and experienced technical staff, some with over 25 years of experience in the silicon epi industry. Like the rest
of Aeroflex / Metelics, we are highly customer focused. We conduct production / planning meetings daily in order to promote on time delivery.