Aeroflex Microelectronic Solutions

From GaAs to silicon. No one provides a more comprehensive approach to handling all your requests for standard and custom Schottkys, PINs, NIPs, varactors, detectors, limiters, capacitors, resistors, inductors, attenuator pads, and so much more. And they come delivered every way imaginable, from wafers to plastic surface mount.

Aeroflex Metelics Products

Silicon Step Recovery Diodes (SRD)

The Aeroflex / Metelics Silicon Mesa Beam Lead Step Recovery diodes provide low capacitance, very fast transition times, and low inductance along with low parasitic capacitance compared to packaged or chip devices.  The fast transition times make these devices useful for fast sampling gate drivers, frequency multipliers and comb generators to 40 GHz and beyond.

  • Low Inductance
  • Rugged Beam Lead construction
  • Transition times down to 30 picoseconds in 50 system
  • Oxide and polymide passivation
  •   Spice Model

Beam Lead

Model

VBR

Volts

CT pF

t nS

TT pS

Package

MIN

MAX

TYP

MAX

TYP

TYP

MAX

MMDB30-B11

14

25

0.15

0.25

4

30

38

B11

MMDB35-B11

16

30

0.13

0.20

4

35

45

B11

MMDB45-B11

25

40

0.11

0.20

8

45

58

B11

Test Conditions

IR = 10 A

VR = 6V

F = 1 MHz

IF= 10 mA

IR = 6 mA

IF= 3 mA

VR = 7 V

 

 

 

Packaged

Model

VBR

Volts

CT pF

t nS

TT pS

Cp pF

Lp nH

Package

MIN

MIN

MAX

MIN

TYP

TYP

MAX

TYP

TYP

MMDB30-E28 / 28X

14

0.28

0.36

1.0

4.0

30

38

0.08

0.4

E28 / 28X

MMDB30-0402

14

0.25

0.32

1.0

4.0

30

38

0.05

0.2

0402

MMDB30-0805-2

14

0.26

0.33

1.0

4.0

30

38

0.06

0.4

0805-2

MMDB35-E28 / 28X

16

0.25

0.31

1.0

4.0

35

45

0.08

0.4

E28 / 28X

MMDB35-0402

16

0.22

0.28

1.0

4.0

35

45

0.05

0.2

0402

MMDB35-0805-2

16

0.23

0.29

1.0

4.0

35

45

0.06

0.4

0805-2

MMDB45-E28 / 28X

25

0.24

0.31

3.0

8.0

45

58

0.08

0.4

E28 / 28X

MMDB45-0402

25

0.21

0.28

3.0

8.0

45

58

0.05

0.2

0402

MMDB45-0805-2

25

0.22

0.29

3.0

8.0

45

58

0.06

0.4

0805-2

Test Conditions

IR = 10 A

VR = 6V

F = 1 MHz

If= 10 mA

IR = 6 mA measured at 50% recovery

If= 3 mA

VR = 7 V